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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION With TO-126 package Complement to type 2SA1360 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage INC Collector-emitter voltage Emitter-base voltage Collector current Base current E SEM ANG H Ta=25ae Open emitter OND IC CONDITIONS TOR UC VALUE 150 150 5 50 5 1.2 UNIT V V V mA mA Open base Open collector PD Total power dissipation TC=25ae 5 150 -55 +150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA ;IB=0 IC=10mA; IB=1mA IC=10mA ; VCE=5V VCB=150V; IE=0 VEB=5V; IC=0 IC=10mA ; VCE=5V IE=0 ; VCB=10V f=1MHz IC=10mA ; VCE=5V 80 1.8 MIN 150 TYP. 2SC3423 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE Cob fT MAX UNIT V 1.0 0.8 0.1 0.1 240 |I |I V V A A pF MHz hFE Classifications O Y 80-160 CHA IN 120-240 E SEM NG OND IC TOR UC 200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3423 CHA IN E SEM NG Fig.2 Outline dimensions OND IC TOR UC 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3423 CHA IN E SEM NG OND IC TOR UC 4 |
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